Silicon nano-transistors for logic applications
نویسندگان
چکیده
Silicon transistors have undergone rapid miniaturization in the past several decades. Recently reported CMOS devices have dimensional scales approaching the “nano-transistor” regime. This paper discusses performance characteristics of a MOSFET device with 15 nm physical gate length. In addition, aspects of a non-planar CMOS technology that bridges the gap between traditional CMOS and the nano-technology era will be presented. It is likely that this non-planar device will form the basic device architecture for future generations of nano-technology. ? 2003 Elsevier B.V. All rights reserved. PACS: 85.40.U; 85.30.T
منابع مشابه
Design and Implementation of MOSFET Circuits and CNTFET, Ternary Multiplier in the Field of Galois
Due to the high density and the low consumption power in the digital integrated circuits, mostly technology of CMOS is used. During the past times, the Metal oxide silicon field effect transistors (MOSFET) had been used for the design and implementation of the digital integrated circuits because they are compact and also they have the less consumption power and delay to the other transistors. B...
متن کاملDesign and Implementation of MOSFET Circuits and CNTFET, Ternary Multiplier in the Field of Galois
Due to the high density and the low consumption power in the digital integrated circuits, mostly technology of CMOS is used. During the past times, the Metal oxide silicon field effect transistors (MOSFET) had been used for the design and implementation of the digital integrated circuits because they are compact and also they have the less consumption power and delay to the other transistors. B...
متن کاملDesign and Optimization of Input-Output Block using Graphene Nano-ribbon Transistors
In the electronics industry, scaling and optimization is final goal. But, according to ITRS predictions, silicon as basic material for semiconductors, is facing physical limitation and approaching the end of the path. Therefore, researchers are looking for the silicon replacement. Until now, carbon and its allotrope, graphene, look to be viable candidates. Among different circuits, IO block is ...
متن کاملNano Organic Transistor with SiO2 / Poly VinylPyrrolidone Dielectric
In this paper, the morphology, roughness and nano structural properties of SiO2/Poly Vinyl Pyrrolidone synthesized with sol gel method, characterized by using scanning electron microscopy, atomic force microscopy and GPS132A techniques.The main material taken from oxide silicon with weight percentage of 20, 40, 60, 80 and from poly vinyl pyrrolidone with percentages of 80, 60, 40, 20 is synth...
متن کاملA Novel Method Design Multiplexer Quaternary with CNTFET
Background and Objectives: In recent decades, due to the effect of the short channel, the use of CMOS transistors in the nanoscale has become a major concern. One option to deal with this issue is the use of nano-transistors. Methods: Using nano-transistors and multi-valued logic (MVL) can reduce the level of chips and connections and have a direct impact on power consumption. The present study...
متن کامل